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Journal Articles

Challenge to charge exchange with pure carbon foil in the J-PARC 3GeV synchrotron

Nakanoya, Takamitsu; Yoshimoto, Masahiro; Saha, P. K.; Takeda, Osamu*; Saeki, Riuji*; Muto, Masayoshi*

Proceedings of 20th Annual Meeting of Particle Accelerator Society of Japan (Internet), p.937 - 941, 2023/11

In the J-PARC 3GeV Rapid Cycling Synchrotron (RCS), the 400MeV H$$^{-}$$ beam is changed to H+ beam by a charge exchange foil and accelerated to 3GeV. So far, RCS had used two types of charge exchange foil. One is the HBC (Hybrid Boron mixed Carbon) foil and the other is the Kaneka GTF (Graphene Thin Film). HBC foil is a patented deposition method developed at KEK for the stable production of thick carbon foil. Initially, the RCS used HBC foil produced atKEK. However, in 2017, JAEA had started HBC foil production and has been using it since then. Recently, we have succeeded in depositing thick pure carbon foil, which had been considered difficult to produce by the arc deposition method. As a new challenge, this pure carbon foil was used in the user operation from March 2023. As a result, Pure carbon foils showed less deformation and more stable charge exchange performance than HBC and GTF.

Journal Articles

Dirac/Weyl-node-induced oscillating Casimir effect

Nakayama, Katsumasa*; Suzuki, Kei

Physics Letters B, 843, p.138017_1 - 138017_7, 2023/08

 Times Cited Count:0 Percentile:0.02(Astronomy & Astrophysics)

The Casimir effect is a quantum phenomenon induced by the zero-point energy of relativistic fields confined in a finite-size system. This effect for photon fields has been studied for a long time, while the realization of counterparts for fermion fields in Dirac/Weyl semimetals is an open question. We theoretically demonstrate the typical properties of the Casimir effect for relativistic electron fields in Dirac/Weyl semimetals and show the results from an effective Hamiltonian for realistic materials such as Cd$$_3$$As$$_2$$ and Na$$_3$$Bi. We find an oscillation of the Casimir energy as a function of the thickness of the thin film, which stems from the existence of Dirac/Weyl nodes in momentum space. Experimentally, such an effect can be observed in thin films of semimetals, where the thickness dependence of thermodynamic quantities is affected by the Casimir energy.

Journal Articles

Remnants of the nonrelativistic Casimir effect on the lattice

Nakayama, Katsumasa*; Suzuki, Kei

Physical Review Research (Internet), 5(2), p.L022054_1 - L022054_6, 2023/06

The Casimir effect is a fundamental quantum phenomenon induced by the zero-point energy for a quantum field. It is well-known for relativistic fields with a linear dispersion relation, while its existence or absence for nonrelativistic fields with a quadratic dispersion is an unsettled question. Here, we investigate the Casimir effects for various dispersion relations on the lattice. We find that Casimir effects for dispersions proportional to an even power of momentum are absent in a long distance under some types of boundary conditions, while a remnant of the Casimir effect survives in a short distance. The concepts of such absence and remnants of Casimir effect help us to understand observables in finite-size materials with quantum fields on the lattice, such as thin films, narrow nanoribbons, and short nanowires. In terms of this effect, we also give a reinterpretation of the Casimir effect for massive fields.

Journal Articles

Casimir effect for fermions on the lattice

Nakayama, Katsumasa*; Suzuki, Kei

Proceedings of Science (Internet), 430, p.379_1 - 379_9, 2023/04

The conventional Casimir effect has been studied in the continuous spacetime, but to elucidate its counterpart in the lattice space is an important subject. Here, we discuss various types of Casimir effects for quantum fields on the lattice. By using a definition of the Casimir energy on the lattice, we show that the Casimir effect for the Wilson fermion is similar to that for the continuous Dirac fermion. We apply our definition to an effective Hamiltonian describing Dirac semimetals, such as Cd$$_3$$As$$_2$$ and Na$$_3$$Bi, and find an oscillatory behavior of the Casimir energy as a function of film thickness of semimetals. We also study contributions from Landau levels under magnetic fields and the Casimir effect for nonrelativistic particle fields on the lattice.

Journal Articles

Crystal structure, photomagnetic and dielectric properties of a cyanido-bridged Cu-Mo assembly film

Ikeda, Yusuke*; Matsumura, Daiju; Tsuji, Takuya; Namai, Asuka*; Imoto, Kenta*; Tokoro, Hiroko*; Nakabayashi, Koji*; Okoshi, Shinichi*

Inorganica Chimica Acta, 550, p.121434_1 - 121434_8, 2023/03

 Times Cited Count:0 Percentile:0.01(Chemistry, Inorganic & Nuclear)

Journal Articles

Precise chemical state analyses of ultrathin hafnium films deposited on clean Si(111)-7$$times$$7 surface using high-resolution core-level photoelectron spectroscopy

Kakiuchi, Takuhiro*; Matoba, Tomoki*; Koyama, Daisuke*; Yamamoto, Yuki*; Kato, Daiki*; Yoshigoe, Akitaka

Surface Science, 701, p.121691_1 - 121691_8, 2020/11

 Times Cited Count:1 Percentile:6.04(Chemistry, Physical)

Ultrathin hafnium films on Si(111)-7$$times$$7 were studied using synchrotron radiation photoelectron spectroscopies to reveal the chemical states at interface and surface. Ultrathin Hf layers grow on clean Si(111)-7$$times$$7 surface by lever rule. Surface and interface of Hf/Si(111) contain three components (metallic Hf layers, Hf monosilicide (HfSi) and Si-rich Hf silicide). Ultrathin Hf layers changes HfSi$$_{2}$$ islands on bared Si(111)-7$$times$$7 surface after annealing at 1073 K. It was found that the long axes of the rectangle islands expand the direction connecting the corner holes in DAS model of clean Si(111)-7$$times$$7 surface.

Journal Articles

Modulation of Dirac electrons in epitaxial Bi$$_2$$Se$$_3$$ ultrathin films on van der Waals ferromagnet Cr$$_2$$Si$$_2$$Te$$_6$$

Kato, Takemi*; Sugawara, Katsuaki*; Ito, Naohiro*; Yamauchi, Kunihiko*; Sato, Takumi*; Oguchi, Tamio*; Takahashi, Takashi*; Shiomi, Yuki*; Saito, Eiji; Sato, Takafumi*

Physical Review Materials (Internet), 4(8), p.084202_1 - 084202_6, 2020/08

 Times Cited Count:4 Percentile:20.66(Materials Science, Multidisciplinary)

Journal Articles

Synchrotron radiation application on surface/interface and nanotechnology in Japan Atomic Energy Agency

Yoshigoe, Akitaka

Oyo Butsuri Gakaki Hakumaku, Hyomen Butsuri Bunkakai Newsletter, (168), p.52 - 53, 2019/09

When I become a permanent secretary of the Thin Film and Surface Physics Subcommittee of the Japan Society of Applied Physics, I use Newsletter to introduce a part of my research.

Journal Articles

Fabrication status of charge stripper foil for 3 GeV synchrotron of J-PARC

Nakanoya, Takamitsu; Yoshimoto, Masahiro; Yamazaki, Yoshio; Takeda, Osamu*; Saeki, Riuji*; Muto, Masayoshi*

Proceedings of 16th Annual Meeting of Particle Accelerator Society of Japan (Internet), p.545 - 549, 2019/07

In the 3 GeV Rapid Cycling Synchrotron (RCS) of the Japan Proton Accelerator Research complex (J-PARC), we adopted the carbon stripper foil for the multi-turn H- charge exchange injection. The charge exchange foil which use in RCS is fabricated by the arc discharge method with the boron doped carbon electrode. The foil fabricated this method is called HBC foil (Hybrid Boron mixed Carbon stripper foil). HBC foil had been developed at KEK. It has high durability for the beam irradiation damage. In past days, the foil fabrication process was conducted in KEK Tsukuba-site and the foil preparation process was conducted in JAEA Tokai-site. In 2017, the foil deposition apparatus has been relocated from KEK to JAEA, and we started both processes in Tokai-site. We carried out the offline beam irradiation test for the new HBC foil which fabricated in JAEA, and we confirmed that its performance is equivalent to the original HBC foil. Next we tested a new HBC foil with actual beam in RCS and we confirmed it could withstand 1 week beam irradiation. After that, we started user operation with the new HBC foil in 2018. So far we accomplished stable user operation for one year by using the new HBC foil only.

Journal Articles

Analysis of carbon thin films by laser Raman method

Kinsho, Michikazu; Kamiya, Junichiro; Koizumi, Oji*; Nasu, Shogo*

Proceedings of 15th Annual Meeting of Particle Accelerator Society of Japan (Internet), p.668 - 670, 2018/08

Crystallinity, crystalline structure and internal force of thin films were measured by Laser Raman spectroscopy for the purpose of analyzing the fracture mechanism of the charge exchange foil due to beam hitting in this study. Thin films were used four types of HBC foil, pure carbon film (C foil) formed by arc discharge method, graphene, and carbon nanotube (CNT foil). As a result of changing the laser output and measuring the Raman peak shift of each foil, the HBC foil and the C foil had large Raman peak shift change, the D-band was negative and the G-band was opposite sign with positive. On the other hand, the graphene and the CNT foil showed small change in Raman peak shift, and both D-band and G-band were negative. From these results, it was found that a large stress occurs in the HBC foil and the C foil due to the heat load by the laser which was used for Raman spectrum measurements.

Journal Articles

Micro-orientation control of silicon polymer thin films on graphite surfaces modified by heteroatom doping

Shimoyama, Iwao; Baba, Yuji; Hirao, Norie*

Advances in Engineering (Internet), 1 Pages, 2018/02

The performance of organic devices largely depends on molecular orientation in organic films. Whereas micro-orientation control of organic molecules is an indispensable technology for integration of organic devices, the method has not been established. We attempted to control micro-orientation of polydimethylsilane (PDMS) thin films by deposition of PDMS on graphite substrates modified by hetero atom doping using ion beam. Polarization dependence measurements of X-ray absorption spectroscopy and molecular orbital calculations clarified that PDMS films have lying, standing, and random orientations on the non irradiated, N$$_{2}$$$$^{+}$$-irradiated, and Ar$$^{+}$$-irradiated graphite surfaces, respectively. Furthermore, photoemission microscopy observation clarified that a PDMS film showed micro-patterns on a graphite surface with a microstructure on the order of $$mu$$m by separating N$$_{2}$$$$^{+}$$-irradiated and non irradiated areas. These results demonstrate our method is promising for micro-orientation of organic molecules.

Journal Articles

Mn$$_{2}$$VAl Heusler alloy thin films; Appearance of antiferromagnetism and exchange bias in a layered structure with Fe

Tsuchiya, Tomoki*; Kobayashi, Ryota*; Kubota, Takahide*; Saito, Kotaro*; Ono, Kanta*; Ohara, Takashi; Nakao, Akiko*; Takanashi, Koki*

Journal of Physics D; Applied Physics, 51(6), p.065001_1 - 065001_7, 2018/02

 Times Cited Count:10 Percentile:45.99(Physics, Applied)

Journal Articles

Micro-orientation control of silicon polymer thin films on graphite surfaces modified by heteroatom doping

Shimoyama, Iwao; Baba, Yuji; Hirao, Norie*

Applied Surface Science, 405, p.255 - 266, 2017/05

 Times Cited Count:1 Percentile:5.94(Chemistry, Physical)

NEXAFS spectroscopy is applied to study orientation structures of polydimethylsilane (PDMS) films deposited on heteroatom-doped graphite substrates prepared by ion beam doping. The Si ${it K}$-edge NEXAFS spectra of PDMS show opposite trends of polarization dependence for non irradiated and N$$_{2}$$$$^{+}$$-irradiated substrates, and show no polarization dependence for an Ar$$^{+}$$-irradiated substrate. Based on a theoretical interpretation of the NEXAFS spectra via first-principles calculations, we clarify that PDMS films have lying, standing, and random orientations on the non irradiated, N$$_{2}$$$$^{+}$$-irradiated, and Ar$$^{+}$$-irradiated substrates, respectively. Furthermore, photoemission electron microscopy indicates that the orientation of a PDMS film can be controlled with microstructures on the order of $$mu$$m by separating irradiated and non irradiated areas on the graphite surface. These results suggest that surface modification of graphite using ion beam doping is useful for micro-orientation control of organic thin films.

Journal Articles

Observation of oriented organic semiconductor using Photo-Electron Emission Microscope (PEEM) with polarized synchrotron

Sekiguchi, Tetsuhiro; Baba, Yuji; Hirao, Norie; Honda, Mitsunori; Izumi, Toshinori; Ikeura, Hiromi*

Molecular Crystals and Liquid Crystals, 622(1), p.44 - 49, 2015/12

BB2014-1632.pdf:0.71MB

 Times Cited Count:0 Percentile:0.01(Chemistry, Multidisciplinary)

The molecular orientation is one of the important factors for controlling various properties in organic semiconductor materials. Films are usually heterogeneous. Thus they exist as a mixture of microscopic domains which have a variety of orientation directions. Therefore, it is essential to observe selectively microscopic domains with different orientation direction. In this work, we have developed the photoelectron emission microscopy (PEEM) system combined with the linearly polarized vacuum ultraviolet (VUV) light or synchrotron radiation (SR) X-rays. PEEM images (FOV = ca.50 micro m) for poly(3-hexylthiophene), P3HT thin films were observed under the UV irradiation with various polarization angles, including in-plain and out-of-plain polarization. Morphologies at some bright parts are different each other. The resultant observation suggests that it enables us to distinguish oriented micro-domains with specific directions of polymer chain axis from other amorphous parts.

Journal Articles

Growth of single-phase nanostructured Er$$_2$$O$$_3$$ thin films on Si (100) by ion beam sputter deposition

Mao, W.*; Fujita, Masaya*; Chikada, Takumi*; Yamaguchi, Kenji; Suzuki, Akihiro*; Terai, Takayuki*; Matsuzaki, Hiroyuki*

Surface & Coatings Technology, 283, p.241 - 246, 2015/12

 Times Cited Count:3 Percentile:13.89(Materials Science, Coatings & Films)

Single-phase nanocrystalline thin films of Er$$_2$$O$$_3$$ (440) has been first prepared using Si (100) substrates by ion beam sputter deposition at 973 K at a pressure of $$<$$ 10$$^{-5}$$ Pa and $${it in}$$-$${it situ}$$ annealing at 1023 K at a pressure of $$approx$$ 10$$^{-7}$$ Pa. Er silicides formed during the deposition are eliminated via the annealing, which results in the single phase and the smooth surface of the Er$$_2$$O$$_3$$ thin films. The epitaxial relationship between Si (100) and Er$$_2$$O$$_3$$ (110) is clarified by X-ray diffraction and reflection high energy electron diffraction.

Journal Articles

Magnetic field dependence of the canted spin moment around the interface between ferromagnetic Ni and antiferromagnetic FeMn revealed by the polarized neutron reflectivity

Amemiya, Kenta*; Sakamaki, Masako*; Mizusawa, Mari*; Takeda, Masayasu

JPS Conference Proceedings (Internet), 8, p.034004_1 - 034004_6, 2015/09

Journal Articles

Depth analysis of the surface of Mg$$_{2}$$Si crystals with XAS and XPS

Yamamoto, Hiroyuki; Nojima, Takehiro; Esaka, Fumitaka

Photon Factory Activity Report 2014, Part B, P. 112, 2015/00

In order to develop silicon-based electronic devices, metal silicides are widely studied. Information of the surface chemical states of metal silicides is important to obtain homo-epitaxial films with excellent quality. In this work, depth analysis of surface chemical states of Mg$$_{2}$$Si crystals is carried by XPS. Depth analysis is also performed in XAS measurement with a partial electron yield (PEY) mode. The Si 1s XPS spectra of the cleaved surface of the Mg$$_{2}$$Si crystal indicates that SiO is formed on the surface of the Mg$$_{2}$$Si crystal. Here, no peak assigned to SiO$$_{2}$$ structure is observed. The Si K-edge XAS spectra obtained with the PEY mode show a peak at 1843.7 eV, which can be assigned to SiO structure.

Journal Articles

Orientation effect of organic semiconducting polymer revealed using Photo-Electron Emission Microscope (PEEM)

Sekiguchi, Tetsuhiro; Baba, Yuji; Shimoyama, Iwao; Hirao, Norie; Honda, Mitsunori; Izumi, Toshinori; Ikeura, Hiromi*

Photon Factory Activity Report 2013, Part B, P. 546, 2014/00

The molecular orientation is one of the important factors for controlling various properties in organic semiconductor materials. Films are usually heterogeneous. Thus they exist as a mixture of microscopic domains which have a variety of orientation directions. Therefore, it is essential to observe selectively microscopic domains with different orientation direction. In this work, we have developed the photoelectron emission microscope (PEEM) system combined with the linearly polarized vacuum ultraviolet (VUV) light or synchrotron radiation (SR) X-rays. PEEM images for poly(3-hexylthiophene), P3HT thin films were observed under synchrotron X-ray irradiation with linearly polarization. In conclusion, it was found that PEEM with polarized synchrotron can be a powerful tool that gives information of molecular orientation in nano-meter scale.

Journal Articles

Molecular orientation of pentacene derivative

Ikeura, Hiromi*; Sekiguchi, Tetsuhiro

Photon Factory Activity Report 2013, Part B, P. 518, 2014/00

Organic electrically conducting $$pi$$-stacked small molecules are widely regarded as promising materials for future application of low-cost and flexible nanoelectronics. Pentacene is one of the most promising organic semiconductors because of its excellent device performance. Direct measurements of electronic structures of unoccupied states of organic semiconductors lead to better understanding of mechanism of electron conduction. For probing unoccupied partial density of states (DOS), X-ray absorption spectroscopy (XAS) is commonly used, where selective excitation of the 1s core electron to the unoccupied conduction band is possible. The molecular orientation of pentacene derivative has been investigated by angle dependent XAS measurements. Electronic states were calculated by DVX$$alpha$$ method.

Journal Articles

Non-destructive depth profiling of Au/Si(100) with X-ray absorption spectroscopy

Yamamoto, Hiroyuki; Nojima, Takehiro; Esaka, Fumitaka

Photon Factory Activity Report 2013, Part B, P. 227, 2014/00

In the present study, we examined to perform depth profiling with X-ray absorption spectroscopy (XAS) by changing electron energies (5-50 eV) for detection in order to develop non-destructive depth profiling method with chemical state information. Gold thin films (1-10 nm) deposited on Si(100) were used for specimens. The Si/Au ratios were calculated from the peak heights of each edge using observed XAS spectra. Obvious correlation between the Si/Au ratio and the electron energy is observed. With decreasing electron energy, the ratio increased significantly. This means that by reducing electron energy, information on deeper region of the surface can be obtained. These results indicate that by changing electron energies for detection, it is possible to perform non-destructive depth profiling in XAS analysis.

152 (Records 1-20 displayed on this page)